![]() Delay and power has been evaluated by Tanner simulator using TSMC BSIM 0.250μm technologies. The simulation results reveal better delay and power performance for the proposed modified GDI full adders when compared with the existing GDI technique, CMOS and pass transistor logic at 0.250μm CMOS technologies. The latter presents the implementation of 5 different modified GDI full adders and its performance issues. With the NMOS, where it has an N channel, the arrow points from the P-type substrate to the N-type channel. Knowing this, the arrow is much like a diode symbol. The substrate and the channel in a MOSFET forms a PN junction. The former presents the implementation of modified primitive logic cells and its performance issues were compared with GDI and CMOS logic. A diode symbol points from the P to the N of a PN junction. This paper focuses two main design approaches. This technique allows reducing power consumption, delay and area of digital circuits, while maintaining low complexity of logic design. This paper mainly presents the design of 5 different full adder topologies using Modified Gate Diffusion Input Technique. These issues can be overcome by incorporating Gated Diffusion Input (GDI) technique. Optimization of several devices for speed and power is a significant issue in low-voltage and low-power applications. The primary issues in the design of adder cell are area, delay and power dissipation. Addition is an indispensable operation for any high speed digital system, digital signal processing or control system. ![]()
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